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MCR106-6, MCR106-8
Preferred Device
Sensitive Gate Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume consumer applications such as temperature, light and speed control; process and remote control, and warning systems where reliability of operation is important.
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* * * * *
Glass-Passivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability Pb-Free Packages are Available*
Rating Symbol VDRM, VRRM 400 600 IT(RMS) IT(AV) ITSM I2t PGM PG(AV) IGM VRGM TJ Tstg 4.0 2.55 25 2.6 0.5 0.1 0.2 6.0 -40 to +110 -40 to +150 A A Value Unit V
SCRs 4 AMPERES RMS 400 thru 600 VOLTS
G A K
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 110C, Sine Wave 50 to 60 Hz, Gate Open) MCR106-6 MCR106-8 On-State RMS Current, (TC = 93C) (180 Conduction Angles) Average On-State Current, (180 Conduction Angles; TC = 93C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110C) Circuit Fusing Considerations, (t = 8.3 ms) Forward Peak Gate Power, (TC = 93C, Pulse Width v 1.0 ms) Forward Average Gate Power, (TC = 93C, t = 8.3 ms) Forward Peak Gate Current, (TC = 93C, Pulse Width v 1.0 ms) Peak Reverse Gate Voltage, (TC = 93C, Pulse Width v 1.0 ms) Operating Junction Temperature Range Storage Temperature Range
3 A A2s W W A V C C
21
TO-225AA CASE 77 STYLE 2
MARKING DIAGRAM
YWW CR 106-xG
Mounting Torque (Note 2) - 6.0 in. lb. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Torque rating applies with use of compression washer (B52200-F006 or equivalent). Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common. (See AN209B). For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200C. For optimum results, an activated flux (oxide removing) is recommended. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2005
Y = Year WW = Work Week CR106-x = Device Code x = 6 or 8 G = Pb-Free Package
PIN ASSIGNMENT
1 2 3 Cathode Anode Gate
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value.
1
November, 2005 - Rev. 4
Publication Order Number: MCR106/D
MCR106-6, MCR106-8
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RqJC RqJA TL Max 3.0 75 260 Unit C/W C/W C
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM; RGK = 1000 Ohms) IDRM, IRRM TJ = 25C TJ = 110C - - - - 10 200 mA mA
ON CHARACTERISTICS
Peak Forward On-State Voltage (Note 3) (ITM = 4 A Peak) Gate Trigger Current (Continuous dc) (Note 4) (VAK = 7 Vdc, RL = 100 Ohms) (TC = -40C) Gate Trigger Voltage (Continuous dc) (Note 4) (VAK = 7 Vdc, RL = 100 Ohms) Gate Non-Trigger Voltage (Note 4) (VAK = 12 Vdc, RL = 100 Ohms, TJ = 110C) Holding Current (VAK = 7 Vdc, Initiating Current = 200 mA, Gate Open) VTM IGT - - VGT VGD IH - 0.2 - - - - - - 200 500 1.0 - 5.0 V V mA - - 2.0 V mA
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage (TJ = 110C) 3. Pulse Test: Pulse Width 1.0 ms, Duty Cycle 1%. 4. RGK current is not included in measurement. dv/dt - 10 - V/ms
ORDERING INFORMATION
Device MCR106-6 MCR106-6G MCR106-8 MCR106-8G Package TO-225AA TO-225AA (Pb-Free) TO-225AA TO-225AA (Pb-Free) Shipping 500 Units / Box 500 Units / Box 500 Units / Box 500 Units / Box
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2
MCR106-6, MCR106-8
Voltage Current Characteristic of SCR
+ Current
Anode + VTM
Symbol
VDRM IDRM VRRM IRRM VTM IH
Parameter
Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode - IRRM at VRRM on state IH
+ Voltage IDRM at VDRM Forward Blocking Region (off state)
CURRENT DERATING
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE C) ( 110 TA , MAXIMUM ALLOWABLE AMBIENTTEMPERATURE ( C)
110
106 102 98 94 90 = 30 86 82 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 IT(AV), AVERAGE FORWARD CURRENT (AMP) 3.6 4.0 60 90 120 180 dc 0 f = 60 Hz
90 0 f = 60 Hz
70
50 = 30 0 0.1
60
90 180
dc 0.8
30
0.2 0.3 0.4 0.5 0.6 0.7 IT(AV), AVERAGE FORWARD CURRENT (AMP)
Figure 1. Maximum Case Temperature
Figure 2. Maximum Ambient Temperature
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3
MCR106-6, MCR106-8
PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE Z
-B- U Q
F M
C
-A-
123
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 ---
H
K
V G S D 2 PL 0.25 (0.010)
M
J R 0.25 (0.010) A
M
A
M
M
B
M
B
M
DIM A B C D F G H J K M Q R S U V
STYLE 2: PIN 1. CATHODE 2. ANODE 3. GATE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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4
MCR106/D

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